Element San Jose (formerly PCTEST)
Part of Element Materials Technology
More labs in this area: EMC testing in California
San Jose, California, United States
382 Piercy Road , San Jose, California, 95138, United States
About
Element's San Jose laboratory — formerly known as PCTEST San Jose — is a Connected Technologies testing and certification facility located at 382 Piercy Road in San Jose, California, in the heart of Silicon Valley. Like its sister lab in Columbia, Maryland, it was founded in 1989 by former FCC engineers to provide independent regulatory testing for technology product manufacturers. The San Jose facility shares the same core DNA as Element's Columbia lab, specializing in wireless device testing and certification for the mobile and cellular industry. Key services include EMC/EMI testing, RF testing and certification, Specific Absorption Rate (SAR) testing, Hearing Aid Compatibility (HAC) testing, Over the Air (OTA) testing, 4G/LTE conformance testing, field interoperability testing (FIT), RF parametric and protocol testing, lithium battery testing, SunSpec Alliance certification, and Verizon Wireless Open Development certification testing. The lab's Silicon Valley location makes it a convenient choice for the many consumer electronics, smartphone, and wireless device manufacturers based in the Bay Area and broader West Coast region. As part of the Element Materials Technology network, the San Jose lab gives clients access to Element's global infrastructure of over 270 laboratories across 30+ countries, spanning materials testing, product qualification, environmental simulation, and certification services.
Accreditations
| Accreditation |
|---|
| A2LA |
| ISO/IEC 17025 |
Testing Services
| Test Type | Applicable Standards |
|---|---|
| Radiated Emissions | CFR 47 FCC Part 15, Subpart B (using ANSI C63.4:2014), CFR 47 FCC Part 18 (using MP-5:1986), IEC/CISPR 11, EN 55011, KS C 9811, CISPR 14-1 (excluding click and power disturbance), IEC/EN 55014-1, KS C 9814-1, CISPR 15, IEC/EN 55015, IEC/CISPR 22, IEC/EN 55022, IEC/EN 55032, CISPR 32, EN 55103-1, KS C 9832, AS/NZS CISPR 11, AS/NZS CISPR 32, ICES-001, ICES-003, ICES-005, VCCI V-3, VCCI-CISPR 32 (up to 6 GHz), CNS 13803, CNS 13783-1, CNS 13438, CNS 15936 (up to 6 GHz), TCVN 7189 (2009), 3GPP TS 36.124, 3GPP TS 51.010-1, Section 12 (Conducted and Radiated Spurious Emissions), 3GPP TS 38.124, ETSI TS 136 124 LTE; ETSI TS 151 010-1, ETSI TS 138.124 5G; ETSI TS 134.124 3G, Digital Cellular Telecommunications System (Phase 2+) (GSM) |
| Conducted Emissions | CFR 47 FCC Part 15, Subpart B (using ANSI C63.4:2014), CFR 47 FCC Part 18 (using MP-5:1986), IEC/CISPR 11, EN 55011, KS C 9811, CISPR 14-1 (excluding click and power disturbance), IEC/EN 55014-1, KS C 9814-1, CISPR 15, IEC/EN 55015, IEC/CISPR 22, IEC/EN 55022, IEC/EN 55032, CISPR 32, EN 55103-1, KS C 9832, AS/NZS CISPR 11, AS/NZS CISPR 32, ICES-001, ICES-003, ICES-005, VCCI V-3, VCCI-CISPR 32 (up to 6 GHz), CNS 13803, CNS 13783-1, CNS 13438, CNS 15936 (up to 6 GHz), TCVN 7189 (2009), 3GPP TS 36.124, 3GPP TS 51.010-1, Section 12 (Conducted and Radiated Spurious Emissions), 3GPP TS 38.124, ETSI TS 136 124 LTE; ETSI TS 151 010-1, ETSI TS 138.124 5G; ETSI TS 134.124 3G, Digital Cellular Telecommunications System (Phase 2+) (GSM) |
| Radiated Immunity | IEC 61000-4-3, EN 61000-4-3, KS C 9610-4-3 |
| Conducted Immunity | IEC 61000-4-6, EN 61000-4-6, KS C 9610-4-6 |
| ESD | IEC 61000-4-2, EN 61000-4-2, KS C 9610-4-2 |
| EFT/Burst | IEC 61000-4-4, EN 61000-4-4, KS C 9610-4-4 |
| Surge Immunity | IEC 61000-4-5, EN 61000-4-5, KS C 9610-4-5 |
| Harmonics & Flicker | IEC 61000-3-2, EN 61000-3-2, KS C 9610-3-2, IEC 61000-3-3, EN 61000-3-3, KS C 9610-3-3 |
| Voltage Dips/Interrupts | IEC 61000-4-11, EN 61000-4-11, KS C 9610-4-11 |
| Power Frequency Magnetic Field | IEC 61000-4-8, EN 61000-4-8, KS C 9610-4-8 |
Industries Served
| Industry |
|---|
| Aerospace & Defense |
| Consumer Electronics |
| Information Technology |
| Radio & Wireless |
| Telecommunications |